Proton irradiation-induced reliability degradation of SiC power MOSFET

Thermal Characterization of Die-Attach Degradation in the Power MOSFET

Single Event Effects Induced by Heavy Ion Irradiation in SiC Power MOSFETs

Silicon Carbide power devices are becoming very popular devices in switching power converters due to their superior performances in terms of on state and switching energy losses with respect to the Silicon counterparts [1]. Some works have been dedicated to study Single Event Effects (SEEs) induced by irradiations in SiC power diodes [2-5] and MESFETs [6]. Total IonizationDose Effects, TID, hav...

A brief overview of SiC MOSFET failure modes and design reliability

This paper briefly introduces various aspects which should be considered when implementing Silicon Carbide (SiC) based metal-oxidesemiconductor-field-effect-transistors (MOSFETs) into a design. There is an increasing trend regarding the use of these devices in various applications due to their improved performance over conventional Silicon (Si) based devices. The failure modes of SiC MOSFETs ar...

Reliability and performance limitations in SiC power devices

Despite silicon carbide’s (SiC’s) high breakdown electric field, high thermal conductivity and wide bandgap, it faces certain reliability challenges when used to make conventional power device structures like power MOS-based devices, bipolar-mode diodes and thyristors, and Schottky contact-based devices operating at high temperatures. The performance and reliability issues unique to SiC discuss...

Simulation Study of Lateral Trench Gate Power MOSFET on 4H-SiC

A lateral trench-gate power metal-oxidesemiconductor on 4H-SiC is proposed. The device consists of two separate trenches in which two gates are placed on both sides of Pbody region resulting two parallel channels. Enhanced current conduction and reduced-surface-field effect in the structure provide substantial improvement in the device performance. Using two dimensional simulations, the perform...